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| May 1996 NDP6051 / NDB6051 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 48 A, 50 V. RDS(ON) = 0.022 @ VGS= 10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25C unless otherwise noted NDP6051 50 50 20 40 48 144 100 0.67 -65 to 175 275 NDB6051 Units V V V Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed A PD Total Power Dissipation @ TC = 25C Derate above 25C W W/C C C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds (c) 1997 Fairchild Semiconductor Corporation NDP6051 Rev. C1 Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) gFS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 25 V, ID = 48 A 300 48 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A VDS = 50 V, VGS = 0 V TJ = 125C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A TJ = 125C Static Drain-Source On-Resistance VGS = 10 V, ID = 24 A TJ = 125C On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 24 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz 60 14 2 1.4 2.8 2.2 0.018 0.03 50 250 1 100 -100 V A mA nA nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage 4 3.6 0.022 0.04 A S V DYNAMIC CHARACTERISTICS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance 1220 520 190 pF pF pF SWITCHING CHARACTERISTICS (Note 1) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 24 V, ID = 48 A, VGS = 10V VDD = 30 V, ID = 48 A, VGS = 10 V, RGEN = 7.5 10 132 28 80 37 8 22 20 250 55 150 53 nS nS nS nS nC NDP6051 Rev. C1 Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 24 A (Note 1) TJ = 125C trr Irr Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IF = 48 A, dIF/dt = 100 A/s 35 2 0.9 0.8 48 144 1.3 1.2 140 8 ns A A A V THERMAL CHARACTERISTICS RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.5 62.5 C/W C/W Note: 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. NDP6051 Rev. C1 Typical Electrical Characteristics 100 , DRAIN-SOURCE CURRENT (A) VGS = 12V 2.5 9.0 80 R DS(on) , NORMALIZED 8.0 DRAIN-SOURCE ON-RESISTANCE 10 2 VGS = 6.0V 7.0 60 7.0 1.5 40 8.0 6.0 9.0 10 12 1 20 I D 5.0 0 0 1 V DS 2 3 4 , DRAIN-SOURCE VOLTAGE (V) 5 0.5 0 20 I D 40 60 , DRAIN CURRENT (A) 80 100 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2 DRAIN-SOURCE ON-RESISTANCE 2.5 I D = 24A 1.75 1.5 1.25 1 0.75 0.5 -50 DRAIN-SOURCE ON-RESISTANCE 2.25 2 1.75 1.5 1.25 1 0.75 0.5 0 VGS = 10V R DS(ON) , NORMALIZED R DS(on) , NORMALIZED V GS = 10V TJ = 125C 25C -55C -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (C) J 150 175 20 40 60 ID , DRAIN CURRENT (A) 80 100 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 60 GATE-SOURCE THRESHOLD VOLTAGE 1.2 V DS = 10V 50 I D , DRAIN CURRENT (A) T = -55C J 125C 25C V GS(th), NORMALIZED 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 V DS = V GS I D = 250A 40 30 20 10 0 2 4 6 8 10 V GS , GATE TO SOURCE VOLTAGE (V) -25 0 25 50 75 100 125 T , JUNCTION TEMPERATURE (C) J 150 175 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation With Temperature. NDP6051 Rev. C1 Typical Electrical Characteristics (continued) 1.15 BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE I , REVERSE DRAIN CURRENT (A) I D = 250A 1.1 50 20 5 2 1 V GS = 0V TJ = 125C 25C 1.05 0.1 1 -55C 0.01 0.95 0.001 0.9 -50 -25 0 T J 25 50 75 100 125 , JUNCTION TEMPERATURE (C) 150 175 S 0.0001 0.2 0.4 0.6 0.8 1 1.2 V , BODY DIODE FORWARD VOLTAGE (V) SD 1.4 Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 3000 2000 CAPACITANCE (pF) 20 V GS, GATE-SOURCE VOLTAGE (V) I D = 48A Ciss Coss 15 VDS = 12V 24V 48V 1000 500 10 Crss 300 200 f = 1 MHz V GS = 0V 1 2 V DS 5 100 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 0 0 20 40 Q g , GATE CHARGE (nC) 60 80 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. VDD t on t off tr 90% V IN D RL V OUT DUT t d(on) t d(off) 90% tf VGS R GEN G VOUT 10% 10% INVERTED 90% S V IN 10% 50% 50% PULSE WIDTH Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP6051 Rev. C1 Typical Electrical Characteristics (continued) 30 300 gFS, TRANSCONDUCTANCE (SIEMENS) V DS=10V TJ = -55C 25C I D , DRAIN CURRENT (A) 24 100 50 R (O DS N) Lim it 100 1ms s 18 20 10 5 2 1 125C 10m VGS = 10V SINGLE PULSE o RJC = 1.5 C/W T C = 25C 12 100 DC s ms 6 0 0.5 0 10 20 I D, DRAIN CURRENT (A) 30 40 1 2 3 5 10 20 30 VDS , DRAIN-SOURCE VOLTAGE (V)) 50 70 Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0.2 D = 0.5 r(t), NORMALIZED EFFECTIVE 0.2 0.1 R JC (t) = r(t) * RJC R JC = 1.5 C/W 0.1 0.05 P(pk) 0.05 0.03 0.02 0.01 0.01 0.02 0.01 Single Pulse t1 t2 TJ - T C = P * R JC (t) Duty Cycle, D = t 1 /t2 0.1 0.2 0.5 1 2 5 t1 ,TIME (m s) 10 20 50 100 200 500 1000 0.02 0.05 Figure 15. Transient Thermal Response Curve. NDP6051 Rev. C1 |
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